page:p - p 1 plastic - encapsulate transistors fe a tures ? high voltage ? complement to bc546,bc547,bc548 maxi mum ratings ( t a =25 unless otherwise noted) symbol par a met e r v alue unit v cbo col l ector - ba s e v o l t age bc5 5 6 - 80 v bc5 5 7 - 50 bc5 5 8 - 30 v ceo col l ector - emitter v o l t age bc5 5 6 - 65 v bc5 5 7 - 45 bc5 5 8 - 30 v ebo emitter - base v o l t a g e - 5 v i c col l ector cur re n t - cont i nu o us - 0.1 a p c col l ector p o w e r dissi p a t i on 625 mw r ja t hermal resis t ance from ju n ction to ambi e n t 200 / w t j juncti o n t emperature 150 t stg s torage t e mp e rature - 55~+150 bc556/bc557/BC558 ( pn p ) 2. base 3. emitter to - 92 1. collecto email: info@olitech-elec.com website: www.olitech-elec.com olitech electronics co. ltd.
page:p4 - p 2 electrical characteristics ( @ ta=25 unless otherwise specified ) p a r a m e t e r s y mbol t es t con d iti o ns min t y p m a x unit c o llect o r - b ase b reak d o w n v o l t a g e bc5 5 6 v (br)cbo i c = - 0.1ma,i e =0 - 80 v bc5 5 7 - 50 bc5 5 8 - 30 collector - emitter b reak d o w n v o l t a g e bc5 5 6 v (br)ceo i c = - 2 ma,i b =0 - 65 v bc5 5 7 - 45 bc5 5 8 - 30 emitter - ba s e breakd o w n v o l t age v (br)ebo i e = - 10 0 ? a,i c =0 - 5 v collector cut - off current bc5 5 6 i cbo v cb = - 70 v ,i e =0 - 0 .1 ? a bc5 5 7 v cb = - 45 v ,i e =0 - 0 .1 ? a bc5 5 8 v cb = - 25 v ,i e =0 - 0 .1 ? a collector cut - off current bc5 5 6 i ceo v ce = - 60 v ,i b =0 - 0 .1 ? a bc5 5 7 v ce = - 40 v ,i b =0 - 0 .1 ? a bc5 5 8 v ce = - 25 v ,i b =0 - 0 .1 ? a emitter cut - off current i ebo v eb = - 5 v ,i c =0 - 0 .1 ? a dc cur r ent gain h fe * v ce = - 5 v , i c = - 2 ma 120 800 collecto r - emitter satu r ation v o l t age v ce(sat) i c = - 10ma,i b = - 0 .5ma - 0.3 v i c = - 100ma,i b = - 5 ma - 0 . 6 5 v ba s e - emitt e r sat u rati o n v o l t a g e v be(sat) i c = - 10ma,i b = - 0 .5ma - 0.8 v i c = - 100ma,i b = - 5ma - 1 v base - emitter v o ltage v be v ce = - 5 v , i c = - 2 ma - 0.55 - 0.7 v v ce = - 5 v , i c = - 1 0 ma - 0.82 v collector output ca p aci t ance c ob v cb = - 10 v ,i e =0, f=1mhz 6 pf t r a n s ition fr e qu e n c y bc5 5 6 f t v ce = - 5 v,i c = - 10ma, f=100mhz 150 mhz bc5 5 7 150 mhz bc5 5 8 150 mhz classific a tion of h fe r a n k a b c r a n ge 1 10 - 2 20 1 80 - 460 420 - 800 bc556/bc557/BC558 plastic - encapsulate transistors email: info@olitech-elec.com website: www.olitech-elec.com 2 / , 7 ( & + ( / ( & 7 5 2 1 , & 6 & 2 / 7 '
page:p - p 3 bc556/bc557/BC558 typical cha racteristics figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collectoremitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.7 0.5 0.3 0.2 10 100 1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c 55 c to +125 c i c = 100 ma i c = 20 ma 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 i c = 200 ma i c = 50 ma i c = 10 ma figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. currentgain bandwidth product i c , collector current (madc) 0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.5 c, capacitance (pf) f , currentgain bandwidth product (mhz) t t a = 25 c c ob c ib 0.6 1.0 2.0 4.0 6.0 10 20 30 40 150 1.0 2.0 3.0 5.0 10 20 30 50 v ce = 10 v t a = 25 c t a = 25 c 1.0 plastic - encapsulate transistors email: info@olitech-elec.com website: www.olitech-elec.com olitech electronics co. ltd.
figure 7. dc current gain i c , collector current (amp) figure 8. aono voltage i c , collector current (ma) 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 200 0.2 0.2 0.5 0.2 1.0 10 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collectoremitter voltage (volts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t j = 25 c i c = 10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = 5.0 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 55 c to 125 c q vb for v be 2.0 5.0 20 50 100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. currentgain bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 100 v ce = 5.0 v c, capacitance (pf) f , currentgain bandwidth product t 0.5 5.0 20 t j = 25 c c ob c ib 8.0 50 ma 200 ma page:p - p bc556/bc557/BC558 typical cha racteristics plastic - encapsulate transistors email: info@olitech-elec.com website: www.olitech-elec.com olitech electronics co. ltd.
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